1 FQPF8N60CF n-channel mosfet absolute maximum ratings thermal characteristics d g s to-220f gs d symbol parameter FQPF8N60CFt unit v dss drain-source voltage 600 v i d drain current - continuous (t c = 25c) 6.26* a - continuous (t c = 100c) 3.96* a i dm drain current - pulsed (note 1) 25* a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 160 mj i ar avalanche current (note 1) 6.26 a e ar repetitive avalanche energy (note 1) 14.7 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25c) 48 w - derate above 25c 0.38 w/c t j , t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds 300 c symbol parameter FQPF8N60CF unit r jc thermal resistance, junction-to-case 2.6 c /w r ja thermal resistance, junction-to-ambient 62.5 c /w * drain current limited by maximum junction temperature ? ? ? 100% a valanche tested ? this n-channel enhancement mode power mosfet is produced using fairchild semiconductor ? s proprietary planar stripe and dmos technology. this advanced mosfet technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. these devices are suitable for switched mode power supplies, active power factor correction (pfc), and electronic lamp ballasts. march 2013 FQPF8N60CF n-channel qf et ? frfet ? mosfet 600 v, 6.26 a, 1.5 ? description features 7.5 a, 600 v, r ds(on) = 1.2 (max.) @v gs = 10 v, i d = 3.75 a low gate charge (typ. 28 nc) low c rss (typ. 12 pf) www.fairchildsemi.com ?200 fairchild semiconductor corporation fqpf 1 0cf rev. c0
2 package marking and ordering information electrical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating : pulse width limited by maximum junction temperature 2. l = 7.3mh, i as = 6.26a, v dd = 50v, r g = 25 ?, starting t j = 25c 3. i sd 6.26a, di/dt 200a/ s, v dd bv dss, starting t j = 25c 4. pulse test : pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature device marking device package reel size tape width quantity FQPF8N60CFt FQPF8N60CFt to-220f -- -- 50 symbol parameter test conditions min typ max unit off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 600 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c -- 0.7 -- v/c i dss zero gate voltage drain current v ds = 600 v, v gs = 0 v -- -- 10 a v ds = 480 v, t c = 125c -- -- 100 a i gssf gate-body leakage current, forward v gs = 30 v, v ds = 0 v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30 v, v ds = 0 v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a2 . 0- -4 . 0v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 3.13 a -- 1.25 1.5 ? g fs forward transconductance v ds = 40 v, i d =3.13 a (note 4) -- 8.7 -- s dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 965 1255 pf c oss output capacitance -- 105 135 pf c rss reverse transfer capacitance -- 12 16 pf switching characteristics t d(on) turn-on delay time v dd = 300 v, i d = 6.26a, r g = 25 ? (note 4, 5) -- 16.5 45 ns t r turn-on rise time -- 60.5 130 ns t d(off) turn-off delay time -- 81 170 ns t f turn-off fall time -- 64.5 140 ns q g total gate charge v ds = 480 v, i d = 6.26a, v gs = 10 v (note 4, 5) -- 28 36 nc q gs gate-source charge -- 4.5 -- nc q gd gate-drain charge -- 12 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 6.26 a i sm maximum pulsed drain-source diode forward current -- -- 25 a v sd drain-source diode forward voltage v gs = 0 v, i s = 6.26 a -- -- 1.4 v t rr reverse recovery time v gs = 0 v, i s = 6.26 a, di f / dt = 100 a/ s (note 4) -- 82 -- ns q rr reverse recovery charge -- 242 -- nc FQPF8N60CF n-channel mosfet www.fairchildsemi.com ?200 fairchild semiconductor corporation fqpf 1 0cf rev. c0
3 typical performance characteristics figure 1. on-region characteristics f igure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs . source current and temperatue figure 5. capacitance characteristics f igure 6. gate charge characteristics 10 -1 10 0 10 1 10 -1 10 0 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v bottom : 5.0 v notes : ? 1. 250 s pulse test 2 . t c = 25 ? i d , drain current [a] v ds , drain-source voltage [v] 24681 0 10 -1 10 0 10 1 150 o c 25 o c -55 o c notes : ? 1. v ds = 40v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -1 10 0 10 1 150 ? notes : ? 1. v gs = 0v 2. 250 s pulse test 25 ? i dr , reverse drain current [a] v sd , source-drain voltage [v] 0 5 10 15 20 0.5 1.0 1.5 2.0 2.5 3.0 3.5 v gs = 20v v gs = 10v note : t ? j = 25 ? r ds(on) [ ? ], drain-source on-resistance i d , drain current [a] 0 5 10 15 20 25 30 0 2 4 6 8 10 12 v ds = 300v v ds = 120v v ds = 480v * note : i d = 6.26a v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 0 200 400 600 800 1000 1200 1400 1600 1800 2000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes ; ? 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] FQPF8N60CF n-channel mosfet www.fairchildsemi.com ?200 fairchild semiconductor corporation fqpf 1 0cf rev. c0
4 typical performance characteristics (continued) figure 7. breakdown voltage variatio n figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. transient thermal response curve -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 * notes : 1. v gs = 0 v 2. i d = 250 ae bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 * notes : 1. v gs = 10 v 2. i d = 3.13 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 dc 100ms 10ms 1ms 100 s 10 s operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-sourcevoltage[v] 25 50 75 100 125 150 0 2 4 6 8 i d , drain current [a] t c , case temperature [ o c] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * notes : 1 . z ?jc (t) = 2.6 ? /w max. 2 . duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z ?jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z ?jc (t), thermal response t 1 , square wave pulse duration [sec] t 1 p dm t 2 FQPF8N60CF n-channel mosfet www.fairchildsemi.com ?200 fairchild semiconductor corporation fqpf 1 0cf rev. c0
5 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms FQPF8N60CF n-channel mosfet www.fairchildsemi.com ?200 fairchild semiconductor corporation fqpf 1 0cf rev. c0
6 peak diode recovery dv/dt test circuit & waveforms FQPF8N60CF n-channel mosfet www.fairchildsemi.com ?200 fairchild semiconductor corporation fqpf 1 0cf rev. c0
7 FQPF8N60CF n-channel mosfet www.fairchildsemi.com ?200 fairchild semiconductor corporation fqpf 1 0cf rev. c0 mechanical dimensions dimensions in millimeters to-220 f
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